Has been set to 1 eV. In this work, we use term
Has been set to 1 eV. In this work, we use term deposited power (Edep ) for the Scaffold Library Solution energy deposited by the passing ion (and equal to the ion energy loss), and retained energy (Eret ) for the power that remained within the target material by the end of the simulation. The difference is equal towards the emitted energy (Eem ) that was carried away into vacuum by the emitted electrons. three. Simulation Final results Following the ion impact, electronic excitation spreads on the femtosecond timescale via the target material. The illustration shown in Figure 1a shows evolution from the electronic excitation during the passage of 1 MeV/n Si ion via ten nm thick graphite target. The presented histograms show incremental distribution from the local retained power density acquired inside 0.1 fs, expressed in cylindrical coordinates (R, z) for the cylindrically shaped target: dE d3 E = (1) dV RdRddz At this kinetic energy, velocity on the silicon ion is 1.four 107 m/s and it traverses 10 nm thick target inside 0.7 fs. This really is clearly observed in Figure 1 as an electronic excitation front that originates and moves in the wake in the silicon ion. Even following the ion passage, electronic excitation is still evolving within the target. Moreover, cumulative retained energy density is shown in Figure 1e . These graphs indicate the final spatial retained power density distribution is reached already inside 1 fs immediately after the ion passage, mostly as a consequence of the slowing down from the main (-ray) electrons, in agreement with YC-001 Protocol earlier operates (Ref. [25] and references therein). Simulation benefits of energetic ion passage via graphite (shown in Figure 1) is usually utilised to calculate radial profiles of retained power density shown in Figure 2a, also because the depth profiles of retained power shown in Figure 2b. Clearly, for the 1 nm thin target, larger percentage of your deposited power is carried away outside the material by way of the electron emission, and consequently, much less power remains in the material. For this reason, retained energy density promptly diminishes at larger distances from the ion trajectory within the 1 nm thin target. Within the case in the thicker target, like the one particular shown here which includes a thickness of ten nm, retained power density falls off slower at larger distances since the electrons from deeper inside the material have much less likelihood to escape in the target. Histograms of retained and deposited energies are shown for 1 MeV/n Si passage by means of ten nm (Figure 2c) and 1 nm (Figure 2d) graphite targets. From this output we calculated that 84 of deposited energy remains inside the material for the ten nm thick target, and only 67 of deposited power remains within 1 nm thin target. In both cases the dispersion of data was noticeable, but the retention of energy was clearly additional pronounced for the ten nm thick target. The final spatial retained energy density distribution, obtained from the layer of material in the middle on the 10 nm thick target (to prevent probable effects related to the surface proximity) is shown in Figure 3a for different kinetic energies of silicon ions. It shows well-known “velocity effect”, when slower velocity ions trigger much more localized and dense electronic excitations, even though higher velocity ions cause propagation of excitation to larger volumes, resulting in smaller densities of deposited energy. To a lesser degree, the exact same is observed for the 1 nm thin target shown in Figure 3b. Again, radial density of retained power is extra localized aroun.